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? semiconductor components industries, llc, 2016 august, 2016 ? rev. 4 1 publication order number: ncs2009/d ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 operational amplifier, rail-to-rail input and output, 350 khz the ncs2009 series operational amplifiers provide rail?to?rail input and output operation, 350 khz bandwidth, and are available in single, dual, and quad configurations. rail?to?rail operation gives designers use of the entire supply voltage range while taking advantage of the 350 khz bandwidth. the ncs2009 can operate on supply voltages from 1.8 to 5.5 v over a temperature range from ?40 c to 125 c. at a 1.8 v supply, this device has a slew rate of 0.15 v/ s while consuming only 20 a of quiescent current per channel. since this is a cmos device, high input impedance and low bias currents make it ideal for interfacing to a wide variety of signal sensors. the ncs2009 devices are available in a variety of compact packages. features ? rail?to?rail input and output ? wide supply range: 1.8 to 5.5 v ? wide bandwidth: 350 khz ? slew rate: 0.15 v/ s at v s = 1.8 v ? low supply current: 20 a per channel at v s = 1.8 v ? low input bias current: 1 pa typical ? wide temperature range: ?40 c to 125 c ? available in a variety of packages ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant applications ? unity gain buffer ? battery powered / low quiescent current applications ? low cost current sensing ? automotive this document contains information on some products that are still under development. on semiconductor reserves the right to change or discontinue these products without notice. www. onsemi.com ordering information see detailed ordering and shipping information on page 3 o f this data sheet. 1 14 soic?14 case 751a sc70?5 case 419a 1 5 tsop?5/sot23?5 case 483 micro8 /msop8 case 846a 1 8 soic?8 case 751 tssop?8 case 948s tssop?14 case 948g see general marking information in the device marking section on page 2 of this data sheet. device marking information udfn6 case 517ap 1 6 1 14
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 2 soic?14 case 751a xxxxx awlywwg 1 14 sc70?5 case 419a xxm udfn6 case 517ap micro8 /msop8 case 846a soic?8 case 751 xxxxxx alyw 1 8 xxx yww a tssop?8 case 948s xxxx xxxx alyw 1 14 tssop?14 case 948g single channel configuration ncs20091, ncv20091 dual channel configuration ncs20092, ncv20092 quad channel configuration ncs20094, ncv20094 xxxxx = specific device code a = assembly location wl, l = wafer lot y = year ww, w = work week g or = pb?free package xxxx ayw 1 8 (note: microdot may be in either location) marking diagrams tsop?5/sot23?5 case 483 xx m 1 1 5 xxxayw
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 3 1 4 3 2 14 11 12 13 out 1 in? 1 in+ 1 vdd out 4 in? 4 in+ 4 vss 7 6 5 8 9 10 in+ 2 in? 2 out 2 in+ 3 in? 3 out 3 + ? + ? ? + + ? figure 1. pin connections single channel configuration ncs20091, ncv20091 dual channel configuration ncs20092, ncv20092 quadruple channel configuration ncs20094, ncv20094 1 3 2 5 4 out in? in+ vss vdd + ? sc70?5, sot23?5 (tsop?5) 1 3 2 5 4 out in? in+ vss vdd + ? sot23?5 (tsop?5) sn2 pinout 1 4 3 2 8 5 6 7 out 1 in? 1 in+ 1 vss vdd out 2 in? 2 in+ 2 + + ? ? udfn6 1.6 x 1.6 1 3 2 6 4 vss in+ in? nc vdd + ? 5 out sq3, sn3 pinout ordering information device configuration automotive marking package shipping ? ncs20091sq3t2g single** no aaq sc70 contact local sales office for more information ncs20091sn2t1g aev sot23?5/tsop?5 ncs20091sn3t1g aew sot23?5/tsop?5 NCS20091MUTAG aj udfn6 ncv20091sq3t2g yes aaq sc70 ncv20091sn2t1g aev sot23?5/tsop?5 ncv20091sn3t1g aew sot23?5/tsop?5 ncv20091mutag aj udfn6 ncs20092dmr2g dual no 2k92 micro8/msop8 ncs20092dr2g ncs20092 soic?8 ncs20092dtbr2g k92 tssop?8 ncv20092dmr2g yes 2k92 micro8/msop8 ncv20092dr2g ncs20092 soic?8 ncv20092dtbr2g k92 tssop?8 ncs20094_ quad** no tbd soic?14 ncs20094_ tbd sop?14 ncs20094_ tbd tssop?14 ncv20094_ yes tbd soic?14 ncv20094_ tbd sop?14 ncv20094_ tbd tssop?14 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d *ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable. **in development. not yet released.
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 4 absolute maximum ratings (note 1) rating symbol limit unit supply voltage (v dd ? v ss ) (note 2) v s 7 v input voltage v i v ss ? 0.5 to v dd + 0.5 v differential input voltage v id v s v maximum input current i i 10 ma maximum output current i o 100 ma continuous total power dissipation (note 2) p d 200 mw maximum junction temperature t j 150 c storage temperature range t stg ?65 to 150 c mounting temperature (infrared or convection ? 20 sec) t mount 260 c esd capability (note 3) human body model machine model charge device model esd hbm esd mm esd cdm 2000 100 2000 v latch?up current (note 4) i lu 100 ma moisture sensitivity level (note 5) msl level 1 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics for safe operating area. 2. continuous short circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junc tion temperature of 150 c. output currents in excess of the maximum output current rating over the long term may adversely affect reliability. shorting output to either vdd or vss will adversely affect reliability. 3. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per aec?q100?002 (jedec standard: jesd22?a114) esd machine model tested per aec?q100?003 (jedec standard: jesd22?a115) 4. latch?up current tested per jedec standard: jesd78 5. moisture sensitivity level tested per ipc/jedec standard: j - std - 020a thermal information parameter symbol channels package single layer board (note 6) multi?layer board (note 7) unit junction to ambient thermal resistance ja single sc?70 c/w sot23?5/tsop?5 udfn6 dual micro8/msop8 236 167 soic?8 190 131 tssop?8 253 194 quad soic?14 sop?14 tssop?14 6. value based on 1s standard pcb according to jedec51?3 with 1.0 oz copper and a 300 mm 2 copper area 7. value based on 1s2p standard pcb according to jedec51?7 with 1.0 oz copper and a 100 mm 2 copper area operating ranges parameter symbol min max unit operating supply voltage v s 1.8 5.5 v differential input voltage v id v s v input common mode range v icm v ss ? 0.2 v dd + 0.2 v ambient temperature t a ?40 125 c functional operation above the stresses listed in the recommended operating ranges is not implied. extended exposure to stresse s beyond the recommended operating ranges limits may affect device reliability.
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 5 electrical characteristics at v s = 1.8 v t a = 25 c; r l 10 k ; v cm = v out = mid?supply unless otherwise noted. boldface limits apply over the specified temperature range, t a = ?40 c to 125 c. (note 8) parameter symbol conditions min typ max unit input characteristics input offset voltage v os 0.5 3.5 mv 4 mv offset voltage drift v os / t 1 v/ c input bias current (note 8) i ib 1 pa 1500 pa input offset current (note 8) i os 1 pa 1100 pa channel separation xtlk dc 125 db differential input resistance r id 10 g common mode input resistance r in 10 g differential input capacitance c id 1 pf common mode input capacitance c cm 5 pf common mode rejection ratio cmrr v cm = v ss ? 0.2 to v dd + 0.2 48 73 db v cm = v ss + 0.2 to v dd ? 0.2 45 output characteristics open loop voltage gain a vol 85 120 db 73 short circuit current i sc output to positive rail, sinking current 8.5 ma output to negative rail, sourcing current 7.5 output voltage high v oh voltage output swing from positive rail 3 19 mv 20 output voltage low v ol voltage output swing from negative rail 3 19 mv 20 ac characteristics unity gain bandwidth ugbw 350 khz slew rate at unity gain sr v id = 1.2 vpp, gain = 1 0.15 v/ s phase margin m 60 gain margin a m 15 db settling time t s v in = 1.2 vpp, gain = 1 settling time to 0.1% 21 s settling time to 0.01% 27 open loop output impedance z ol f = 100 hz 1 noise characteristics total harmonic distortion plus noise thd+n v in = 1.2 vpp, f = 1 khz, av = 1 0.04 % input referred voltage noise e n f = 1 khz 40 nv/ h z f = 10 khz 30 input referred current noise i n f = 1 khz 300 fa/ hz supply characteristics power supply rejection ratio psrr no load 63 90 db 60 power supply quiescent current i dd per channel, no load 20 29 a 8. performance guaranteed over the indicated operating temperature range by design and/or characterization.
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 6 electrical characteristics at v s = 3.3 v t a = 25 c; r l 10 k ; v cm = v out = mid?supply unless otherwise noted. boldface limits apply over the specified temperature range, t a = ?40 c to 125 c. (note 9) parameter symbol conditions min typ max unit input characteristics input offset voltage v os 0.5 3.5 mv 4 mv offset voltage drift v os / t 1 v/ c input bias current (note 9) i ib 1 pa 1500 pa input offset current (note 9) i os 1 pa 1100 pa channel separation xtlk dc 125 db differential input resistance r id 10 g common mode input resistance r in 10 g differential input capacitance c id 1 pf common mode input capacitance c cm 5 pf common mode rejection ratio cmrr v cm = v ss ? 0.2 to v dd + 0.2 53 76 db v cm = v ss + 0.2 to v dd ? 0.2 48 output characteristics open loop voltage gain a vol 85 120 db 73 short circuit current i sc output to positive rail, sinking current 8.5 ma output to negative rail, sourcing current 7.5 output voltage high v oh voltage output swing from positive rail 3 24 mv 25 output voltage low v ol voltage output swing from negative rail 3 24 mv 25 ac characteristics unity gain bandwidth ugbw 350 khz slew rate at unity gain sr v in = 2.5 vpp, gain = 1 0.15 v/ s phase margin m 60 gain margin a m 15 db settling time t s v in = 2.5 vpp, gain = 1 settling time to 0.1% 21 s settling time to 0.01% 27 open loop output impedance z ol f = 100 hz 1 noise characteristics total harmonic distortion plus noise thd+n v in = 2.5 vpp, f = 1 khz, av = 1 0.04 % input referred voltage noise e n f = 1 khz 40 nv/ h z f = 10 khz 30 input referred current noise i n f = 1 khz 300 fa/ hz supply characteristics power supply rejection ratio psrr no load 63 90 db 60 power supply quiescent current i dd per channel, no load 21 31 a 9. performance guaranteed over the indicated operating temperature range by design and/or characterization.
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 7 electrical characteristics at v s = 5.5 v t a = 25 c; r l 10 k ; v cm = v out = mid?supply unless otherwise noted. boldface limits apply over the specified temperature range, t a = ?40 c to 125 c. (note 10) parameter symbol conditions min typ max unit input characteristics input offset voltage v os 0.5 4 mv 5 mv offset voltage drift v os / t 1 v/ c input bias current (note 10) i ib 1 pa 1500 pa input offset current (note 10) i os 1 pa 1100 pa channel separation xtlk dc 125 db differential input resistance r id 10 g common mode input resistance r in 10 g differential input capacitance c id 1 pf common mode input capacitance c cm 5 pf common mode rejection ratio cmrr v cm = v ss ? 0.2 to v dd + 0.2 55 79 db v cm = v ss + 0.2 to v dd ? 0.2 51 output characteristics open loop voltage gain a vol 90 120 db 78 short circuit current i sc output to positive rail, sinking current 8.5 ma output to negative rail, sourcing current 7.5 output voltage high v oh voltage output swing from positive rail 3 24 mv 25 output voltage low v ol voltage output swing from negative rail 3 24 mv 25 ac characteristics unity gain bandwidth ugbw 350 khz slew rate at unity gain sr v id = 5 vpp, gain = 1 0.15 v/ s phase margin m 60 gain margin a m 15 db settling time t s v in = 5 vpp, gain = 1 settling time to 0.1% 21 s settling time to 0.01% 27 open loop output impedance z ol f = 100 hz 1 noise characteristics total harmonic distortion plus noise thd+n v in = 5 vpp, f = 1 khz, av = 1 0.04 % input referred voltage noise e n f = 1 khz 40 nv/ h z f = 10 khz 30 input referred current noise i n f = 1 khz 300 fa/ hz supply characteristics power supply rejection ratio psrr no load 63 90 db 60 power supply quiescent current i dd per channel, no load 23 33 a 10. performance guaranteed over the indicated operating temperature range by design and/or characterization. product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 8 typical performance characteristics t a = 25 c, r l 10 k , v cm = v out = mid?supply unless otherwise specified figure 2. quiescent current per channel vs. supply voltage figure 3. quiescent current vs. temperature supply voltage (v) temperature ( c) 4.5 3.5 2.5 1.5 0 5 10 15 25 30 120 100 80 40 20 0 ?20 ?40 0 5 10 15 25 30 figure 4. offset voltage vs. supply voltage figure 5. offset voltage vs. temperature supply voltage (v) temperature ( c) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 120 100 80 60 20 0 ?20 ?40 0 0.1 0.2 0.3 0.4 0.5 0.6 figure 6. offset voltage vs. common mode voltage figure 7. open?loop gain and phase margin vs. frequency common mode voltage (v) frequency (hz) 2.00 1.25 0.50 0 ?0.50 ?1.25 ?2.00 ?2.75 ?4 ?3 ?2 ?1 0 2 3 4 10m 1m 100k 10k 1k 100 1 ?20 0 20 40 60 100 120 140 supply current ( a) supply current ( a) offset voltage (mv) offset voltage (mv) offset voltage (mv) gain (db) 5.5 t = 25 c t = 125 c t = ?40 c 60 140 v s = 1.8 v v s = 3.3 v v s = 5.5 v t = 25 c t = 125 c t = ?40 c 5.5 v s = 1.8 v v s = 3.3 v v s = 5.5 v 40 140 80 phase margin ( ) 0 45 90 135 180 gain phase margin r l = 10 k c l = 15 pf t = 25 c 1 v s = 5.5 v 10 units 2.75 20 20 10
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 9 typical performance characteristics t a = 25 c, r l 10 k , v cm = v out = mid?supply unless otherwise specified figure 8. phase margin vs. capacitive load figure 9. thd + n vs. output voltage capacitive load (pf) output voltage (vpp) 500 400 300 200 100 0 0 10 20 30 40 50 70 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 100 figure 10. thd + n vs. frequency figure 11. input voltage noise vs. frequency frequency (hz) frequency (hz) 100k 10k 1k 100 10 0.001 0.01 0.1 10 100k 10k 1k 100 10 1 0 100 200 300 400 800 1000 figure 12. input current noise vs. frequency figure 13. psrr vs. frequency frequency (hz) frequency (hz) 100k 10k 1k 100 10 1 0 400 600 800 1200 1400 1m 100k 10k 1k 100 10 0 40 120 phase margin ( ) thd+n (%) thd+n (%) voltage noise (nv/ hz) current noise (fa/ hz) psrr (db) v s = 5.5 v r l = 10 k t = 25 c v s = 1.8 v v s = 3.3 v v s = 5.5 v a v = 1 v s = 5.5 v 200 1000 20 60 80 v s = 5.5 v f in = 1 khz a v = 1 v s = 5.5 v v s = 5.5 v, psrr+ v s = 5.5 v, psrr? v s = 1.8 v, psrr+ v s = 1.8 v, psrr? 100 60 1 500 600 700 900
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 10 typical performance characteristics t a = 25 c, r l 10 k , v cm = v out = mid?supply unless otherwise specified figure 14. cmrr vs. frequency figure 15. output voltage high to rail frequency (hz) output current (ma) 1m 100k 10k 1k 100 10 0 10 30 50 60 70 90 10 8 6 4 2 0 0 100 150 200 250 300 figure 16. output voltage low to rail figure 17. non?inverting small signal transient response output current (ma) time ( s) 10 6 4 2 0 0 100 200 300 400 500 50 40 30 20 10 0 ?10 ?20 ?0.10 ?0.02 0.02 0.04 0.06 0.08 0.10 figure 18. inverting small signal transient response figure 19. non?inverting large signal transient response time ( s) time ( s) 50 40 30 20 10 0 ?10 ?20 ?0.10 ?0.08 0 0.02 0.04 0.06 0.08 0.10 60 40 30 20 10 0 ?10 ?20 ?1.0 ?0.6 ?0.2 0 0.2 0.4 0.6 1.0 cmrr (db) output voltage to positive rail (mv) output voltage to negative rail (mv) voltage (v) voltage (v) voltage (v) v s = 1.8 v v s = 3.3 v v s = 5.5 v a v = 1 v s = 1.8 v v s = 3.3 v v s = 5.5 v v s = 1.8 v v s = 3.3 v v s = 5.5 v 80 0 ?0.04 ?0.06 ?0.08 input output 80 ?0.02 ?0.04 ?0.06 80 0.8 ?0.4 ?0.8 8 70 20 40 80 50 60 70 input output 60 70 input output 50
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 11 typical performance characteristics t a = 25 c, r l 10 k , v cm = v out = mid?supply unless otherwise specified figure 20. inverting large signal transient response figure 21. input bias and offset current vs. temperature time ( s) temperature ( c) 70 50 30 20 10 0 ?10 ?20 ?2.0 ?1.5 0 ?0.5 0.5 1.0 1.5 2.0 120 100 60 40 20 0 ?20 ?40 ?100 0 100 200 300 400 500 600 figure 22. input bias current vs. common mode voltage figure 23. 0.1 hz to 10 hz noise common mode voltage (v) time (s) 5.0 4.0 3.5 3.0 2.0 1.0 0 ?4 ?2 0 2 6 9 8 6 5 4 2 1 0 ?6 ?4 ?2 0 2 4 6 figure 24. channel separation vs. frequency figure 25. output impedance vs. frequency frequency (hz) frequency (hz) 10m 1m 100k 10k 1k 100 ?140 ?120 ?100 ?80 ?60 1m 100k 10k 1k 100 10 0.01 0.1 1 10 100 1k 10k voltage (v) current (pa) current (pa) voltage ( v) channel separation (db) output impedance ( ) input output 80 ?1.0 80 140 i ib+ i ib? i os i ib+ i ib? i os 0.5 1.5 2.5 4.5 5.5 3 7 10 v s = 1.8 v v s = 5.5 v a v = 1 60 40 4
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 12 typical performance characteristics t a = 25 c, r l 10 k , v cm = v out = mid?supply unless otherwise specified figure 26. slew rate vs. temperature temperature ( c) 120 100 80 60 20 0 ?20 ?40 0 0.05 0.15 0.20 slew rate (v/ s) 40 140 0.10 sr+ sr?
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 13 package dimensions sc?88a (sc?70?5/sot?353) case 419a?02 issue l notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a?01 obsolete. new standard 419a?02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ?b? mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 solder footprint
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 14 package dimensions tsop?5 case 483 issue l notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimension a. 5. optional construction: an additional trimmed lead is allowed in this location. trimmed lead not to extend more than 0.2 from body. dim min max millimeters a 3.00 bsc b 1.50 bsc c 0.90 1.10 d 0.25 0.50 g 0.95 bsc h 0.01 0.10 j 0.10 0.26 k 0.20 0.60 m 0 10 s 2.50 3.00 123 54 s a g b d h c j 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.20 5x c ab t 0.10 2x 2x t 0.20 note 5 c seating plane 0.05 k m detail z detail z top view side view a b end view
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 15 package dimensions udfn6 1.6x1.6, 0.5p case 517ap issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 e2 bottom view b e 6x 0.10 b 0.05 a c c k 6x note 3 2x 0.10 c pin one reference top view 2x 0.10 c 6x a a1 (a3) 0.05 c 0.05 c c seating plane side view l 6x 1 3 5 6 dim min max millimeters a 0.45 0.55 a1 0.00 0.05 a3 0.13 ref b 0.20 0.30 d 1.60 bsc d2 1.10 1.30 e 1.60 bsc e2 0.45 0.65 e 0.50 bsc k 0.20 ??? l 0.20 0.40 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* l1 detail a 1.26 0.61 0.50 pitch 0.52 6x 1.90 dimensions: millimeters 0.32 1 6x soldermask defined l1 0.00 0.15
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 16 package dimensions micro8 case 846a?02 issue j s b m 0.08 (0.003) a s t notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 (0.006) per side. 4. dimension b does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25 (0.010) per side. 5. 846a-01 obsolete, new standard 846a-02. b e pin 1 id 8 pl 0.038 (0.0015) ?t? seating plane a a1 c l *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max min millimeters ?? ?? 1.10 ?? inches a1 0.05 0.08 0.15 0.002 b 0.25 0.33 0.40 0.010 c 0.13 0.18 0.23 0.005 d 2.90 3.00 3.10 0.114 e 2.90 3.00 3.10 0.114 e 0.65 bsc l 0.40 0.55 0.70 0.016 ?? 0.043 0.003 0.006 0.013 0.016 0.007 0.009 0.118 0.122 0.118 0.122 0.026 bsc 0.021 0.028 nom max 4.75 4.90 5.05 0.187 0.193 0.199 h e h e d d e 8x 0.48 0.65 pitch 5.25 8x 0.80 dimension: millimeters recommended
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 17 package dimensions soic?8 nb case 751?07 issue ak seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751?01 thru 751?06 are obsolete. new standard is 751?07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 ?x? ?y? g m y m 0.25 (0.010) ?z? y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 11: pin 1. source 1 2. gate 1 3. source 2 4. gate 2 5. drain 2 6. drain 2 7. drain 1 8. drain 1
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 18 package dimensions tssop?8 case 948s issue c dim min max min max inches millimeters a 2.90 3.10 0.114 0.122 b 4.30 4.50 0.169 0.177 c --- 1.10 --- 0.043 d 0.05 0.15 0.002 0.006 f 0.50 0.70 0.020 0.028 g 0.65 bsc 0.026 bsc l 6.40 bsc 0.252 bsc m 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash. protrusions or gate burrs. mold flash or gate burrs shall not exceed 0.15 (0.006) per side. 4. dimension b does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25 (0.010) per side. 5. terminal numbers are shown for reference only. 6. dimension a and b are to be determined at datum plane -w-. seating plane pin 1 1 4 85 detail e b c d a g l 2x l/2 ?u? s u 0.20 (0.008) t s u m 0.10 (0.004) v s t 0.076 (0.003) ?t? ?v? ?w? 8x ref k ident k 0.19 0.30 0.007 0.012 s u 0.20 (0.008) t detail e f m 0.25 (0.010) ???? ???? k1 k jj1 section n?n j 0.09 0.20 0.004 0.008 k1 0.19 0.25 0.007 0.010 j1 0.09 0.16 0.004 0.006 n n
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 19 package dimensions soic?14 nb case 751a?03 issue k notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b does not include dambar protrusion. allowable protrusion shall be 0.13 total in excess of at maximum material condition. 4. dimensions d and e do not include mold protrusions. 5. maximum mold protrusion 0.15 per side. h 14 8 7 1 m 0.25 b m c h x 45 seating plane a1 a m s a m 0.25 b s c b 13x b a e d e detail a l a3 detail a dim min max min max inches millimeters d 8.55 8.75 0.337 0.344 e 3.80 4.00 0.150 0.157 a 1.35 1.75 0.054 0.068 b 0.35 0.49 0.014 0.019 l 0.40 1.25 0.016 0.049 e 1.27 bsc 0.050 bsc a3 0.19 0.25 0.008 0.010 a1 0.10 0.25 0.004 0.010 m 0 7 0 7 h 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.019 6.50 14x 0.58 14x 1.18 1.27 dimensions: millimeters 1 pitch soldering footprint* *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d.
ncs20091, ncv20091, ncs20092, ncv20092, ncs20094, ncv20094 www. onsemi.com 20 package dimensions tssop?14 case 948g issue b dim min max min max inches millimeters a 4.90 5.10 0.193 0.200 b 4.30 4.50 0.169 0.177 c ??? 1.20 ??? 0.047 d 0.05 0.15 0.002 0.006 f 0.50 0.75 0.020 0.030 g 0.65 bsc 0.026 bsc h 0.50 0.60 0.020 0.024 j 0.09 0.20 0.004 0.008 j1 0.09 0.16 0.004 0.006 k 0.19 0.30 0.007 0.012 k1 0.19 0.25 0.007 0.010 l 6.40 bsc 0.252 bsc m 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash or gate burrs shall not exceed 0.15 (0.006) per side. 4. dimension b does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25 (0.010) per side. 5. dimension k does not include dambar protrusion. allowable dambar protrusion shall be 0.08 (0.003) total in excess of the k dimension at maximum material condition. 6. terminal numbers are shown for reference only. 7. dimension a and b are to be determined at datum plane ?w?. s u 0.15 (0.006) t 2x l/2 s u m 0.10 (0.004) v s t l ?u? seating plane 0.10 (0.004) ?t? ??? ??? 0.25 (0.010) 8 14 7 1 pin 1 ident. h g a d c b s u 0.15 (0.006) t ?v? 14x ref k n n 7.06 14x 0.36 14x 1.26 0.65 dimensions: millimeters 1 pitch soldering footprint p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncs2009/d micro8 is a trademark of international rectifier literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ?

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